Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70-6L SiA106DJ-T1-GE3
- RS Stock No.:
- 178-3901P
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Brand:
- Vishay Siliconix
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£21.35
(exc. VAT)
£25.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.427 |
| 100 - 490 | £0.402 |
| 500 - 990 | £0.378 |
| 1000 + | £0.332 |
*price indicative
- RS Stock No.:
- 178-3901P
- Mfr. Part No.:
- SiA106DJ-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | TrenchFET | |
| Package Type | SC-70-6L | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 19 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 1.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 8.9 nC @ 10 V | |
| Length | 2.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Series TrenchFET | ||
Package Type SC-70-6L | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 19 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 1.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.9 nC @ 10 V | ||
Length 2.2mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 1mm | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss
Very low RDS - Qg Figure-of-Merit (FOM)
Tuned for the lowest RDS – Qoss