Vishay Siliconix TrenchFET P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70-6L SQA401EEJ-T1_GE3
- RS Stock No.:
- 178-3886P
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Brand:
- Vishay Siliconix
Subtotal 100 units (supplied on a continuous strip)*
£31.10
(exc. VAT)
£37.30
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,975 unit(s) shipping from 12 February 2026
Units | Per unit |
|---|---|
| 100 - 475 | £0.311 |
| 500 - 975 | £0.252 |
| 1000 + | £0.204 |
*price indicative
- RS Stock No.:
- 178-3886P
- Mfr. Part No.:
- SQA401EEJ-T1_GE3
- Brand:
- Vishay Siliconix
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.68 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SC-70-6L | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 13.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±8 V | |
| Typical Gate Charge @ Vgs | 4.2 nC @ 4.5 V | |
| Length | 2.2mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 1.35mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Forward Diode Voltage | 1.2V | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.68 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SC-70-6L | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 13.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±8 V | ||
Typical Gate Charge @ Vgs 4.2 nC @ 4.5 V | ||
Length 2.2mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 1.35mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Forward Diode Voltage 1.2V | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN