Vishay Siliconix TrenchFET P-Channel MOSFET, 16 A, 80 V, 4-Pin PowerPAK SO-8L SQJ481EP-T1_GE3

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Subtotal 25 units (supplied on a continuous strip)*

£13.225

(exc. VAT)

£15.875

(inc. VAT)

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25 +£0.529

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Packaging Options:
RS Stock No.:
178-3883P
Mfr. Part No.:
SQJ481EP-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

Height

1.07mm

RoHS Status: Exempt

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of20V. It has drain-source resistance of 80mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 16A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET

Certifications


• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested