Infineon HEXFET N-Channel MOSFET, 27 A, 55 V, 3-Pin DPAK IRFR4105PBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
178-1503
Mfr. Part No.:
IRFR4105PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

55 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

6.22mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Length

6.73mm

Height

2.39mm

Minimum Operating Temperature

-55 °C

The Infineon IRFR4105 is the 55V single N-channel HEXFET power MOSFET in a D-Pak package. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.

Fast switching
Fully avalanche rated
Lead free