N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK Infineon IRL2910SPBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
178-1462
Mfr. Part No.:
IRL2910SPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

9.65mm

Number of Elements per Chip

1

Length

10.67mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

140 nC @ 5 V

Minimum Operating Temperature

-55 °C

Height

4.83mm

Series

HEXFET

The Infineon 100V single N-channel IR MOSFET in a D2-Pak package. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package.

Advanced process technology
Ultra low on-resistance
Dynamic dv/dt rating
Fast switching
Fully avalanche rated