Infineon HEXFET N-Channel MOSFET, 84 A, 60 V, 3-Pin TO-220AB IRF1010EPBF
- RS Stock No.:
- 178-1449
- Mfr. Part No.:
- IRF1010EPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£35.65
(exc. VAT)
£42.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,000 unit(s) shipping from 25 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.713 | £35.65 |
| 100 - 200 | £0.585 | £29.25 |
| 250 - 450 | £0.549 | £27.45 |
| 500 - 1200 | £0.514 | £25.70 |
| 1250 + | £0.478 | £23.90 |
*price indicative
- RS Stock No.:
- 178-1449
- Mfr. Part No.:
- IRF1010EPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 84 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.69mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Length | 10.54mm | |
| Number of Elements per Chip | 1 | |
| Height | 8.77mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 84 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.69mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Height 8.77mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 84A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF1010EPBF
This MOSFET is designed for high performance in various electronic applications. Its low on-resistance characteristics and capacity for high continuous drain currents make it a key component for engineers in automation and power management systems. The device performs well in rugged environments, ensuring consistent operation across a broad temperature range.
Features & Benefits
• Low RDS(on) contributes to minimal power loss at high currents
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection
• High continuous drain current capability of up to 84A enhances efficiency
• Compact TO-220AB package allows for easy mounting
• Fast switching capabilities improve overall circuit performance
• Fully avalanche rated for added device protection
Applications
• Power supply circuits for efficient voltage regulation
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices
• Motor control systems for precise operation
• Driver circuits in high current
• Signal amplification in electronic devices
What are the thermal resistance values for this product?
The junction-to-case thermal resistance is 0.75°C/W, and the case-to-sink thermal resistance on a flat, greased surface is 0.50°C/W, enabling efficient heat dissipation.
Can it operate safely in environments with high temperatures?
Yes, it functions effectively at temperatures up to 175°C, making it suitable for applications where heat is a concern.
What type of current can it handle at high temperatures?
At a case temperature of 100°C, it can manage a continuous drain current of 59A, ensuring dependable operation under load.
How does the gate charge affect its performance?
With a typical gate charge of 130 nC at 10V, it enables rapid switching and efficient operation in dynamic applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
