Microchip MOSFET TP0606N3-G
- RS Stock No.:
- 177-9861P
- Mfr. Part No.:
- TP0606N3-G
- Brand:
- Microchip
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Subtotal 30 units (supplied in a bag)*
£23.01
(exc. VAT)
£27.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,460 unit(s) shipping from 02 December 2025
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Units | Per unit |
|---|---|
| 30 - 90 | £0.767 |
| 100 + | £0.71 |
*price indicative
- RS Stock No.:
- 177-9861P
- Mfr. Part No.:
- TP0606N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Mounting Type | Through Hole | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Mounting Type Through Hole | ||
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance - 100pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage