ROHM RS1E260AT P-Channel MOSFET, 80 A, 30 V, 8-Pin HSOP RS1E260ATTB1

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Unavailable
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RS Stock No.:
177-6744
Mfr. Part No.:
RS1E260ATTB1
Brand:
ROHM
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Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

HSOP

Series

RS1E260AT

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.8mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

175 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.05mm

Forward Diode Voltage

1.2V

RoHS Status: Not Applicable

COO (Country of Origin):
TH

ROHM MOSFET


The ROHM HSOP8 surface mount P-channel MOSFET is a new age product with a drain-source resistance of 3.1mohm. It has a maximum gate-source voltage of 20V and drain-source voltage of 30V. It has continuous drain current of 80A and maximum power dissipation of 40W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Lead (Pb) free
• Low on resistance
• Operating temperature ranges between -55°C and 150°C

Applications


• For mobile computing
• Load switch
• Notebook adaptor switch

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007