onsemi SiC SiC Power Module, 3-Pin TO-220 FFSP3065A
- RS Stock No.:
- 172-8971
- Mfr. Part No.:
- FFSP3065A
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 2 units)*
£12.38
(exc. VAT)
£14.86
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 198 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £6.19 | £12.38 |
| 10 - 98 | £5.34 | £10.68 |
| 100 - 248 | £4.975 | £9.95 |
| 250 - 498 | £4.855 | £9.71 |
| 500 + | £4.73 | £9.46 |
*price indicative
- RS Stock No.:
- 172-8971
- Mfr. Part No.:
- FFSP3065A
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Power Dissipation | 240 W | |
| Transistor Configuration | Single | |
| Width | 4.8mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Transistor Material | SiC | |
| Maximum Operating Temperature | +175 °C | |
| Height | 16.51mm | |
| Forward Diode Voltage | 2.4V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Power Dissipation 240 W | ||
Transistor Configuration Single | ||
Width 4.8mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Transistor Material SiC | ||
Maximum Operating Temperature +175 °C | ||
Height 16.51mm | ||
Forward Diode Voltage 2.4V | ||
Minimum Operating Temperature -55 °C | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-220-2L
The ON Semiconductor TO-220-2L silicon carbide (SiC) Schottky diode is the latest product that uses a completely new technology that provides superior switching performance and higher reliability to silicon. The diode has many advanced features like temperature independent switching characteristics and excellent thermal performance that makes it undoubtedly the next-generation power semiconductor. This diode offers many benefits that include the highest efficiency, faster-operating frequency, increased power density, reduced EMI and reduced system size and cost.
Features and Benefits
• Avalanche rated 180mJ
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
• Ease of paralleling
• High surge current capacity
• No reverse recovery/no forward recovery
• Operating temperature ranges between -55°C and 175°C
• Positive temperature coefficient
Applications
• EV charger
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
• General purpose
• Industrial power
• PFC
• Power switching circuits
• SMPS
• Solar inverter
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007