onsemi N-Channel MOSFET, 40 A, 650 V, 3 + Tab-Pin TO-220 NTP082N65S3F
- RS Stock No.:
- 172-8782
- Mfr. Part No.:
- NTP082N65S3F
- Brand:
- ON Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 172-8782
- Mfr. Part No.:
- NTP082N65S3F
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 82 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 313 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4.7mm | |
| Length | 10.67mm | |
| Forward Diode Voltage | 1.3V | |
| Height | 16.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 82 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 313 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 81 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4.7mm | ||
Length 10.67mm | ||
Forward Diode Voltage 1.3V | ||
Height 16.3mm | ||
Minimum Operating Temperature -55 °C | ||
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SuperFET III FRFET® MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Typ. RDS(on) = 70 mΩ
Applications
Telecommunication
Cloud system
Industrial
Telecom power
Server power
Solar / UPS
EV charger
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 81 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Typ. RDS(on) = 70 mΩ
Applications
Telecommunication
Cloud system
Industrial
Telecom power
Server power
Solar / UPS
EV charger