onsemi N-Channel MOSFET, 14 A, 650 V, 3-Pin D2PAK FCB199N65S3
- RS Stock No.:
- 172-3419
- Mfr. Part No.:
- FCB199N65S3
- Brand:
- onsemi
Subtotal (1 reel of 800 units)*
£1,268.80
(exc. VAT)
£1,522.40
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 06 March 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £1.586 | £1,268.80 |
*price indicative
- RS Stock No.:
- 172-3419
- Mfr. Part No.:
- FCB199N65S3
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 14 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 199 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 98 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 14 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 199 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 98 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ