onsemi NVMFD5C446NL Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN NVMFD5C446NLT1G
- RS Stock No.:
- 172-3377P
- Mfr. Part No.:
- NVMFD5C446NLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£183.30
(exc. VAT)
£220.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 870 unit(s), ready to ship
Units | Per unit |
|---|---|
| 100 - 240 | £1.833 |
| 250 + | £1.589 |
*price indicative
- RS Stock No.:
- 172-3377P
- Mfr. Part No.:
- NVMFD5C446NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 145 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DFN | |
| Series | NVMFD5C446NL | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5.1mm | |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Length | 6.1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 145 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DFN | ||
Series NVMFD5C446NL | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5.1mm | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Length 6.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 1.05mm | ||
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications.
Low on-resistance
Minimal conduction losses
High current capability
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps
Minimal conduction losses
High current capability
Robust load performance
Voltage overstress safeguard
Applications
Low Side Driver
High Side Driver
Motor drive
Automotive powertrain
Automotive HVAC motors
ABS pressure pumps