Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN onsemi NVMFD5C674NLWFT1G

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Packaging Options:
RS Stock No.:
172-3347
Mfr. Part No.:
NVMFD5C674NLWFT1G
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Length

6.1mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.1mm

Minimum Operating Temperature

-55 °C

Height

1.05mm

Automotive Standard

AEC-Q101

Series

NVMFD5C674NL

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems