onsemi NVMFD5C650NL Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN NVMFD5C650NLWFT1G
- RS Stock No.:
- 172-3345P
- Mfr. Part No.:
- NVMFD5C650NLWFT1G
- Brand:
- onsemi
Subtotal 10 units (supplied on a continuous strip)*
£14.38
(exc. VAT)
£17.26
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,500 unit(s), ready to ship
Units | Per unit |
|---|---|
| 10 + | £1.438 |
*price indicative
- RS Stock No.:
- 172-3345P
- Mfr. Part No.:
- NVMFD5C650NLWFT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 111 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | NVMFD5C650NL | |
| Package Type | DFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 125 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 5.1mm | |
| Length | 6.1mm | |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 111 A | ||
Maximum Drain Source Voltage 60 V | ||
Series NVMFD5C650NL | ||
Package Type DFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 125 W | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 5.1mm | ||
Length 6.1mm | ||
Typical Gate Charge @ Vgs 37 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.2V | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems