onsemi NVMFD5C650NL Dual N-Channel MOSFET, 111 A, 60 V, 8-Pin DFN NVMFD5C650NLWFT1G

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Subtotal (1 pack of 10 units)*

£14.38

(exc. VAT)

£17.26

(inc. VAT)

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Per Pack*
10 +£1.438£14.38

*price indicative

Packaging Options:
RS Stock No.:
172-3345
Mfr. Part No.:
NVMFD5C650NLWFT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

111 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Series

NVMFD5C650NL

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

±20 V

Width

5.1mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

37 nC @ 10 V

Length

6.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems

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