onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG
- RS Stock No.:
- 172-3321
- Mfr. Part No.:
- NVTFS6H850NTAG
- Brand:
- onsemi
Currently unavailable
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- RS Stock No.:
- 172-3321
- Mfr. Part No.:
- NVTFS6H850NTAG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | WDFN | |
| Series | NVTFS6H850N | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 3.15mm | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 3.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type WDFN | ||
Series NVTFS6H850N | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 3.15mm | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 3.15mm | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems