- RS Stock No.:
- 172-0548
- Mfr. Part No.:
- R6007ENX
- Brand:
- ROHM
This product is currently unavailable to backorder.
Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Pack of 10)
£0.83
(exc. VAT)
£1.00
(inc. VAT)
Units | Per unit | Per Pack* |
10 - 40 | £0.83 | £8.30 |
50 - 90 | £0.719 | £7.19 |
100 - 190 | £0.638 | £6.38 |
200 - 390 | £0.623 | £6.23 |
400 + | £0.604 | £6.04 |
*price indicative |
- RS Stock No.:
- 172-0548
- Mfr. Part No.:
- R6007ENX
- Brand:
- ROHM
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 7 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220FM |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.2 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 46 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Width | 4.8mm |
Length | 10.3mm |
Typical Gate Charge @ Vgs | 20 nC @ 10 V |
Height | 15.4mm |
Forward Diode Voltage | 1.5V |
Minimum Operating Temperature | -55 °C |
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