ROHM R6020ENJ N-Channel MOSFET, 20 A, 600 V, 2 + Tab-Pin D2PAK R6020ENJTL
- RS Stock No.:
- 172-0460
- Mfr. Part No.:
- R6020ENJTL
- Brand:
- ROHM
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 172-0460
- Mfr. Part No.:
- R6020ENJTL
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | LPTS, TO-263 | |
| Series | R6020ENJ | |
| Mounting Type | Surface Mount | |
| Pin Count | 2 + Tab | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 231 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 9.2mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.7mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type LPTS, TO-263 | ||
Series R6020ENJ | ||
Mounting Type Surface Mount | ||
Pin Count 2 + Tab | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 231 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 9.2mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.7mm | ||
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low on-resistance.
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating
Fast switching speed.
Gate-source voltage (VGSS) guaranteed to be ±20V.
Drive circuits can be simple.
Parallel use is easy.
Pb-free lead plating