N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G
- RS Stock No.:
- 171-3709
- Mfr. Part No.:
- TSM3N80CH C5G
- Brand:
- Taiwan Semiconductor
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-3709
- Mfr. Part No.:
- TSM3N80CH C5G
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-251 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 94 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 2.3mm | |
| Length | 6.5mm | |
| Height | 7mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-251 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 94 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 2.3mm | ||
Length 6.5mm | ||
Height 7mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
The Taiwan Semiconductor 800V, 3A, 4. 3Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
Low RDS(ON) 3.3Ω (Typ.)
Low gate charge typical @ 19nC (Typ.)
Low Crss typical @ 10.2pF (Typ.)
Improved dv/dt capability
Operating temperature ranges between -55 °C to +150 °C
94W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low gate charge typical @ 19nC (Typ.)
Low Crss typical @ 10.2pF (Typ.)
Improved dv/dt capability
Operating temperature ranges between -55 °C to +150 °C
94W max. power dissipation
Gate threshold voltage ranges between 2V-4V