Taiwan Semi N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK TSM230N06CP ROG
- RS Stock No.:
- 171-3703P
- Mfr. Part No.:
- TSM230N06CP ROG
- Brand:
- Taiwan Semiconductor
Subtotal 25 units (supplied on a reel)*. Quantities below 150 on continuous strip
£13.275
(exc. VAT)
£15.925
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 7,075 unit(s) shipping from 08 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 + | £0.531 |
*price indicative
- RS Stock No.:
- 171-3703P
- Mfr. Part No.:
- TSM230N06CP ROG
- Brand:
- Taiwan Semiconductor
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 28 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 53 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 5.8mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.5mm | |
| Forward Diode Voltage | 1V | |
| Height | 2.3mm | |
Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 28 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 53 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 5.8mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Forward Diode Voltage 1V | ||
Height 2.3mm | ||