Taiwan Semi N-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK TSM060N03CP ROG
- RS Stock No.:
- 171-3651P
- Mfr. Part No.:
- TSM060N03CP ROG
- Brand:
- Taiwan Semiconductor
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£24.45
(exc. VAT)
£29.35
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 650 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 75 | £0.489 |
| 100 - 475 | £0.426 |
| 500 + | £0.391 |
*price indicative
- RS Stock No.:
- 171-3651P
- Mfr. Part No.:
- TSM060N03CP ROG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 54 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 6.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 11.1 nC @ 4.5 V | |
| Width | 5.8mm | |
| Forward Diode Voltage | 1V | |
| Height | 2.3mm | |
Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 54 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 6.5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 11.1 nC @ 4.5 V | ||
Width 5.8mm | ||
Forward Diode Voltage 1V | ||
Height 2.3mm | ||
The Taiwan Semiconductor 30V, 80A, 3+Tab pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
RoHS compliant
150 °C maximum operating temperature
54W max. power dissipation
Gate threshold voltage ranges between 1V-2.5V
150 °C maximum operating temperature
54W max. power dissipation
Gate threshold voltage ranges between 1V-2.5V