Taiwan Semi N-Channel MOSFET, 4 A, 600 V, 3-Pin ITO-220 TSM4NB60CI C0G
- RS Stock No.:
- 171-3626
- Mfr. Part No.:
- TSM4NB60CI C0G
- Brand:
- Taiwan Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 171-3626
- Mfr. Part No.:
- TSM4NB60CI C0G
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | ITO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 14.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.5mm | |
| Width | 6.1mm | |
| Height | 2.28mm | |
| Forward Diode Voltage | 1.13V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type ITO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 14.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6.5mm | ||
Width 6.1mm | ||
Height 2.28mm | ||
Forward Diode Voltage 1.13V | ||
Minimum Operating Temperature -55 °C | ||
The Taiwan Semiconductor 600V, 4A, 2. 5Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
100% Avalanche tested
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
25W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
Operating temperature ranges between -55 °C to +150 °C
25W max. power dissipation
Gate threshold voltage ranges between 2.5V-4.5V