N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23F Toshiba SSM3K329R
- RS Stock No.:
- 171-2538
- Mfr. Part No.:
- SSM3K329R
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 171-2538
- Mfr. Part No.:
- SSM3K329R
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23F | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 289 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.8mm | |
| Typical Gate Charge @ Vgs | 1.5 nC @ 4 V | |
| Height | 0.7mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23F | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 289 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Maximum Operating Temperature +150 °C | ||
Width 1.8mm | ||
Typical Gate Charge @ Vgs 1.5 nC @ 4 V | ||
Height 0.7mm | ||
- COO (Country of Origin):
- TH
1.8-V drive
Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
Low ON-resistance: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V)
RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V)
