Toshiba Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 T2N7002BK

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Subtotal 500 units (supplied on a reel)*

£11.00

(exc. VAT)

£13.00

(inc. VAT)

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500 - 900£0.022
1000 +£0.02

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Packaging Options:
RS Stock No.:
171-2528P
Mfr. Part No.:
T2N7002BK
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

400 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.75 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

1 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

0.39 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

1.3mm

Length

2.9mm

Height

0.9mm

Forward Diode Voltage

1.1V

COO (Country of Origin):
TH
High-Speed Switching

ESD(HBM) level 2 kV
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)

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