Toshiba Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 T2N7002BK
- RS Stock No.:
- 171-2528P
- Mfr. Part No.:
- T2N7002BK
- Brand:
- Toshiba
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Subtotal 500 units (supplied on a reel)*
£11.00
(exc. VAT)
£13.00
(inc. VAT)
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In Stock
- 6,200 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 500 - 900 | £0.022 |
| 1000 + | £0.02 |
*price indicative
- RS Stock No.:
- 171-2528P
- Mfr. Part No.:
- T2N7002BK
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 400 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.75 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 1 W | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 0.39 nC @ 4.5 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 2 | |
| Width | 1.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.1V | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 400 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.75 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.1V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 1 W | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 0.39 nC @ 4.5 V | ||
Length 2.9mm | ||
Number of Elements per Chip 2 | ||
Width 1.3mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.1V | ||
Height 0.9mm | ||
- COO (Country of Origin):
- TH
High-Speed Switching
ESD(HBM) level 2 kV
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)