Toshiba Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363 SSM6N43FU

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
171-2516
Mfr. Part No.:
SSM6N43FU
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.52 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

200 mW

Maximum Gate Source Voltage

±10 V

Width

1.25mm

Length

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.23 nC @ 4 V

Height

0.9mm

COO (Country of Origin):
TH
1.5-V drive
Low ON-resistance RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V)
RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V)
RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V)
RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V)
RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V)