Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin D2PAK TK16G60W
- RS Stock No.:
- 171-2506
- Mfr. Part No.:
- TK16G60W
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2506
- Mfr. Part No.:
- TK16G60W
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Length | 10.35mm | |
| Width | 10.27mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Height | 4.46mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 15.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Length 10.35mm | ||
Width 10.27mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Height 4.46mm | ||
Forward Diode Voltage 1.7V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Applications
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMO
Easy to control Gate switching
Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 m
Switching Voltage Regulators
Features
Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMO
Easy to control Gate switching
Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 m