Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

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Subtotal 25 units (supplied on a continuous strip)*

£31.80

(exc. VAT)

£38.15

(inc. VAT)

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25 - 95£1.272
100 - 995£1.114
1000 +£0.99

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Packaging Options:
RS Stock No.:
171-2499P
Mfr. Part No.:
TK100S04N1L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

76 nC @ 10 V

Length

6.5mm

Width

7mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Height

2.3mm

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
JP
Applications
Automotive
Switching Voltage Regulators
Motor Drivers
Features
Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)