Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU
- RS Stock No.:
- 171-2490P
- Mfr. Part No.:
- SSM6K403TU
- Brand:
- Toshiba
Subtotal 100 units (supplied on a continuous strip)*
£22.40
(exc. VAT)
£26.90
(inc. VAT)
FREE delivery for orders over £50.00
- Final 1,425 unit(s), ready to ship
Units | Per unit |
|---|---|
| 100 - 475 | £0.224 |
| 500 - 975 | £0.199 |
| 1000 + | £0.176 |
*price indicative
- RS Stock No.:
- 171-2490P
- Mfr. Part No.:
- SSM6K403TU
- Brand:
- Toshiba
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | UF6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 66 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 0.35V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±10 V | |
| Number of Elements per Chip | 1 | |
| Length | 1.7mm | |
| Width | 2mm | |
| Typical Gate Charge @ Vgs | 16.8 nC @ 4 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.7mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type UF6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 66 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Number of Elements per Chip 1 | ||
Length 1.7mm | ||
Width 2mm | ||
Typical Gate Charge @ Vgs 16.8 nC @ 4 V | ||
Maximum Operating Temperature +150 °C | ||
Height 0.7mm | ||
- COO (Country of Origin):
- TH
Low ON-resistance: Ron = 66mΩ (max) (@VGS = 1.5V)
Ron = 43mΩ (max) (@VGS = 1.8V)
Ron = 32mΩ (max) (@VGS = 2.5V)
Ron = 28mΩ (max) (@VGS = 4.0V)
