Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L
- RS Stock No.:
- 171-2481P
- Mfr. Part No.:
- TK60S06K3L
- Brand:
- Toshiba
Subtotal 5 units (supplied on a continuous strip)*
£4.82
(exc. VAT)
£5.785
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 3,745 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £0.964 |
*price indicative
- RS Stock No.:
- 171-2481P
- Mfr. Part No.:
- TK60S06K3L
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 88 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 6.5mm | |
| Width | 7mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 88 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 6.5mm | ||
Width 7mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
RoHS Status: Exempt
- COO (Country of Origin):
- JP
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)