Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1
- RS Stock No.:
- 171-2475
- Mfr. Part No.:
- TK55S10N1
- Brand:
- Toshiba
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-2475
- Mfr. Part No.:
- TK55S10N1
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 55 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 157 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 6.5mm | |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 7mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 55 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 157 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 6.5mm | ||
Typical Gate Charge @ Vgs 49 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 7mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- JP
Automotive
Switching Voltage Regulators
Motor Drivers
Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)
Switching Voltage Regulators
Motor Drivers
Low drain-source on-resistance: RDS(ON) = 5.5 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)