Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3
- RS Stock No.:
- 171-2473P
- Mfr. Part No.:
- TJ15P04M3
- Brand:
- Toshiba
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£22.00
(exc. VAT)
£26.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 40 unit(s) ready to ship
- Plus 999,999,950 unit(s) shipping from 03 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.44 |
| 100 - 990 | £0.385 |
| 1000 + | £0.334 |
*price indicative
- RS Stock No.:
- 171-2473P
- Mfr. Part No.:
- TJ15P04M3
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 48 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 29 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Length | 6.6mm | |
| Width | 7.18mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 2.3mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 48 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 29 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Length 6.6mm | ||
Width 7.18mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 2.3mm | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
Applications:
Motor Drivers
Power Management Switches
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
Applications:
Motor Drivers
Power Management Switches