Toshiba N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 TK4R3E06PL
- RS Stock No.:
- 171-2469
- Mfr. Part No.:
- TK4R3E06PL
- Brand:
- Toshiba
Stock information currently inaccessible
- RS Stock No.:
- 171-2469
- Mfr. Part No.:
- TK4R3E06PL
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 87 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 48.2 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 15.1mm | |
| Length | 10.16mm | |
| Forward Diode Voltage | 1.5V | |
| Height | 4.45mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 87 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 48.2 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 15.1mm | ||
Length 10.16mm | ||
Forward Diode Voltage 1.5V | ||
Height 4.45mm | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 15.1 nC (typ.)
Small output charge: Qoss = 39 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 15.1 nC (typ.)
Small output charge: Qoss = 39 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)