Toshiba N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK TK65G10N1

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RS Stock No.:
171-2427
Mfr. Part No.:
TK65G10N1
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

136 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

81 nC @ 10 V

Number of Elements per Chip

1

Width

10.27mm

Length

10.35mm

Maximum Operating Temperature

+150 °C

Height

4.46mm

Forward Diode Voltage

1.2V

RoHS Status: Exempt

COO (Country of Origin):
CN
Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)