Toshiba N-Channel MOSFET, 80 A, 60 V, 3-Pin TO-220 TK4R3E06PL

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RS Stock No.:
171-2424
Mfr. Part No.:
TK4R3E06PL
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

87 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

15.1mm

Length

10.16mm

Typical Gate Charge @ Vgs

48.2 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.5V

Height

4.45mm

RoHS Status: Exempt

COO (Country of Origin):
CN
High-Efficiency DC-DC Converters
Switching Voltage Regulators
Motor Drivers
High-speed switching
Small gate charge: QSW = 15.1 nC (typ.)
Small output charge: Qoss = 39 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)