Toshiba N-Channel MOSFET, 80 A, 100 V, 8-Pin TSON TPN1600ANH
- RS Stock No.:
- 171-2387
- Mfr. Part No.:
- TPN1600ANH
- Brand:
- Toshiba
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 171-2387
- Mfr. Part No.:
- TPN1600ANH
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 42 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Length | 3.1mm | |
| Width | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.85mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 42 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Length 3.1mm | ||
Width 3.1mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.85mm | ||
RoHS Status: Exempt
DC-DC Converters
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 7.4 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.2 mA)
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 7.4 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.2 mA)