Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1
- RS Stock No.:
- 171-1991P
- Mfr. Part No.:
- IPT015N10N5ATMA1
- Brand:
- Infineon
Subtotal 5 units (supplied on a continuous strip)*
£24.35
(exc. VAT)
£29.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 205 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £4.87 |
*price indicative
- RS Stock No.:
- 171-1991P
- Mfr. Part No.:
- IPT015N10N5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 10.58mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 169 nC @ 10 V | |
| Length | 10.1mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.4mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ 5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 10.58mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 169 nC @ 10 V | ||
Length 10.1mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
Forward Diode Voltage 1.2V | ||
Infineon MOSFET
The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• 100% avalanche tested
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
• Excellent gate charge x RDS (on) product (FOM)
• Halogen free
• Highest system efficiency
• Ideal for high switching frequency
• Increased power density
• Lead (Pb) free plating
• Low voltage overshoot
• Operating temperature ranges between -55°C and 175°C
• Optimized for synchronous rectification
• Output capacitance reduction of up to 44%
• RDS (on) reduction of up to 44%
• Very low on resistance RDS (on)
Applications
• Adapter
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication
• Light electric vehicles
• Low voltage drives
• Server power supplies
• Solar
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
• BS EN 61340-5-1:2007
• IEC61249-2-21
• JEDEC
