Infineon BSC036NE7NS3 G N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON BSC036NE7NS3GATMA1
- RS Stock No.:
- 171-1987
- Mfr. Part No.:
- BSC036NE7NS3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£30.02
(exc. VAT)
£36.02
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £3.002 | £30.02 |
*price indicative
- RS Stock No.:
- 171-1987
- Mfr. Part No.:
- BSC036NE7NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | BSC036NE7NS3 G | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.3V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 6.35mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 63.4 nC @ 10 V | |
| Length | 5.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 75 V | ||
Series BSC036NE7NS3 G | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.3V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 6.35mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 63.4 nC @ 10 V | ||
Length 5.35mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
The Infineon BSC036NE7NS3 G is 75V OptiMOS technology specializes in synchronous rectification applications and its based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance.
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Increased efficiency
Highest power density
Less paralleling required