Infineon BSC026N08NS5 N-Channel MOSFET, 100 A, 80 V, 8-Pin TDSON BSC026N08NS5ATMA1
- RS Stock No.:
- 171-1983
- Mfr. Part No.:
- BSC026N08NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£24.31
(exc. VAT)
£29.17
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £2.431 | £24.31 |
| 100 - 490 | £2.063 | £20.63 |
| 500 - 990 | £1.823 | £18.23 |
| 1000 - 2490 | £1.579 | £15.79 |
| 2500 + | £1.54 | £15.40 |
*price indicative
- RS Stock No.:
- 171-1983
- Mfr. Part No.:
- BSC026N08NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TDSON | |
| Series | BSC026N08NS5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 2.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Typical Gate Charge @ Vgs | 74 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 5.49mm | |
| Width | 6.35mm | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TDSON | ||
Series BSC026N08NS5 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 2.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 74 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 5.49mm | ||
Width 6.35mm | ||
Height 1.1mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
The Infineon BSC026N08NS5 is optiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44 %
Ideal for high switching frequency
Output capacitance reduction of up to 44 %