Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC040N10NS5ATMA1
- RS Stock No.:
- 171-1973P
- Mfr. Part No.:
- BSC040N10NS5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£22.52
(exc. VAT)
£27.02
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 10,660 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 20 - 40 | £1.126 |
| 50 - 90 | £1.045 |
| 100 - 240 | £0.978 |
| 250 + | £0.898 |
*price indicative
- RS Stock No.:
- 171-1973P
- Mfr. Part No.:
- BSC040N10NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ 5 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 5.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.8V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 139 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.35mm | |
| Length | 5.49mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ 5 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 5.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.8V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 139 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Typical Gate Charge @ Vgs 58 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6.35mm | ||
Length 5.49mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.1V | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
The Infineon BSC040N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL and its optimized for synchronous rectification and its ideal for high switching frequency switching.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
