Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK IPD600N25N3GATMA1

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Subtotal 20 units (supplied on a continuous strip)*

£28.20

(exc. VAT)

£33.80

(inc. VAT)

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20 - 40£1.41
50 - 90£1.324
100 - 240£1.238
250 +£1.135

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Packaging Options:
RS Stock No.:
171-1948P
Mfr. Part No.:
IPD600N25N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

136 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

22 nC @ 10 V

Width

7.47mm

Minimum Operating Temperature

-55 °C

Height

2.41mm

Forward Diode Voltage

1.2V

The Infineon IPD600N25N3 G is 250V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Industries lowest R DS(on)
Lowest Q g and Q gd