Infineon OptiMOS™ 3 N-Channel MOSFET, 25 A, 250 V, 3-Pin DPAK IPD600N25N3GATMA1
- RS Stock No.:
- 171-1948P
- Mfr. Part No.:
- IPD600N25N3GATMA1
- Brand:
- Infineon
Subtotal 20 units (supplied on a continuous strip)*
£28.20
(exc. VAT)
£33.80
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 8,770 unit(s) shipping from 06 October 2025
Units | Per unit |
---|---|
20 - 40 | £1.41 |
50 - 90 | £1.324 |
100 - 240 | £1.238 |
250 + | £1.135 |
*price indicative
- RS Stock No.:
- 171-1948P
- Mfr. Part No.:
- IPD600N25N3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 25 A | |
Maximum Drain Source Voltage | 250 V | |
Series | OptiMOS™ 3 | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 60 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 136 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 20 V | |
Number of Elements per Chip | 1 | |
Length | 6.73mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
Width | 7.47mm | |
Minimum Operating Temperature | -55 °C | |
Height | 2.41mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 250 V | ||
Series OptiMOS™ 3 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 136 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Width 7.47mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.41mm | ||
Forward Diode Voltage 1.2V | ||
Lowest Q g and Q gd