P-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 International Rectifier IRF7424TRPBF
- RS Stock No.:
- 171-1923P
- Mfr. Part No.:
- IRF7424TRPBF
- Brand:
- International Rectifier
Available to back order for despatch 06/05/2025
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
£0.882
(exc. VAT)
£1.058
(inc. VAT)
| Units | Per unit |
| 50 - 90 | £0.882 |
| 100 - 240 | £0.844 |
| 250 - 490 | £0.807 |
| 500 + | £0.752 |
- RS Stock No.:
- 171-1923P
- Mfr. Part No.:
- IRF7424TRPBF
- Brand:
- International Rectifier
Technical Reference
Legislation and Compliance
RoHS Status: Not Applicable
Product Details
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRF7424 is 30V single P-channel HEXFET power MOSFET in a SO-8 package. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
RoHS compliant
Industry-leading quality
Industry-standard Pinout
P-channel MOSFET
Industry-leading quality
Industry-standard Pinout
P-channel MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SO-8 |
| Series | IRF7424PbF |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 22 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Length | 5mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 75 nC @ 10 V |
| Width | 4mm |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |