Infineon IRF7343PbF N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF
- RS Stock No.:
- 171-1915P
- Mfr. Part No.:
- IRF7343TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£2.05
(exc. VAT)
£2.46
(inc. VAT)
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In Stock
- Plus 2,040 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 10 + | £0.205 |
*price indicative
- RS Stock No.:
- 171-1915P
- Mfr. Part No.:
- IRF7343TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 3.4 A, 4.7 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SO-8 | |
| Series | IRF7343PbF | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.065 Ω, 0.17 Ω | |
| Channel Mode | Depletion | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 5mm | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 2.3 nC @ 10 V, 24 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 3.4 A, 4.7 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SO-8 | ||
Series IRF7343PbF | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.065 Ω, 0.17 Ω | ||
Channel Mode Depletion | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Maximum Gate Source Voltage 20 V | ||
Length 5mm | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 2.3 nC @ 10 V, 24 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Non Compliant
The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.
RoHS Compliant
Low RDS(on)
Dynamic dv/dt rating
Fast switching
Low RDS(on)
Dynamic dv/dt rating
Fast switching
