Infineon Si4435DYPbF P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
- RS Stock No.:
- 171-1913P
- Mfr. Part No.:
- SI4435DYTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£53.30
(exc. VAT)
£64.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,600 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | £0.533 |
| 250 - 490 | £0.511 |
| 500 - 990 | £0.489 |
| 1000 + | £0.455 |
*price indicative
- RS Stock No.:
- 171-1913P
- Mfr. Part No.:
- SI4435DYTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | Si4435DYPbF | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0 | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Width | 4mm | |
| Forward Diode Voltage | 1.2V | |
| Typical Power Gain | 0 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 30 V | ||
Series Si4435DYPbF | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0 | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Width 4mm | ||
Forward Diode Voltage 1.2V | ||
Typical Power Gain 0 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Non Compliant
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
P-channel MOSFET
Surface mount
Available in tape and reel
Lead free
Surface mount
Available in tape and reel
Lead free
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
