Infineon Si4435DYPbF P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
- RS Stock No.:
- 171-1913P
- Mfr. Part No.:
- SI4435DYTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£53.30
(exc. VAT)
£64.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,570 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 100 - 240 | £0.533 |
| 250 - 490 | £0.511 |
| 500 - 990 | £0.489 |
| 1000 + | £0.455 |
*price indicative
- RS Stock No.:
- 171-1913P
- Mfr. Part No.:
- SI4435DYTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SO-8 | |
| Series | Si4435DYPbF | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0 | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Width | 4mm | |
| Typical Power Gain | 0 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8 | ||
Series Si4435DYPbF | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0 | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Width 4mm | ||
Typical Power Gain 0 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Non Compliant
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
P-channel MOSFET
Surface mount
Available in tape and reel
Lead free
Surface mount
Available in tape and reel
Lead free
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