Infineon IRF7807ZPbF N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 IRF7807ZTRPBF

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
171-1911
Mfr. Part No.:
IRF7807ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Series

IRF7807ZPbF

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Length

5mm

Width

4mm

Height

1.5mm

Typical Power Gain

0

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

The Infineon IRF7807Z is the 30V single N-channel HEXFET power MOSFET in a SO-8 Package.

Industry leading quality
Low RDS(ON) at 4.5V VGS
Fully characterized avalanche voltage and current
Ultra low gate impedance