Infineon IRF7205PbF P-Channel MOSFET, 4.6 A, 30 V, 8-Pin SO IRF7205TRPBF
- RS Stock No.:
- 171-1907P
- Mfr. Part No.:
- IRF7205TRPBF
- Brand:
- Infineon
Subtotal 10 units (supplied on a continuous strip)*
£1.44
(exc. VAT)
£1.73
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 10 + | £0.144 |
*price indicative
- RS Stock No.:
- 171-1907P
- Mfr. Part No.:
- IRF7205TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 4.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | IRF7205PbF | |
| Package Type | SO | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Length | 5mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 4.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Series IRF7205PbF | ||
Package Type SO | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Length 5mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Non Compliant
P-Channel Power MOSFET 30V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRF7205 is the 30V single P-channel HEXFET power MOSFET in a SO-8 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
