Infineon IRF1407PbF N-Channel MOSFET, 130 A, 75 V, 3-Pin TO-220AB IRF1407PBF
- RS Stock No.:
- 171-1902
- Mfr. Part No.:
- IRF1407PBF
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-1902
- Mfr. Part No.:
- IRF1407PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Voltage | 75 V | |
| Series | IRF1407PbF | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 330 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 160 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Height | 16.51mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 130 A | ||
Maximum Drain Source Voltage 75 V | ||
Series IRF1407PbF | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 7.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 330 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 160 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Height 16.51mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Target Applications:
Consumer Full-Bridge
Full-Bridge
Push-Pull