Nexperia PMV30UN2 N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 PMV30UN2R

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Subtotal 250 units (supplied on a reel)*

£61.00

(exc. VAT)

£73.25

(inc. VAT)

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250 - 450£0.244
500 - 1200£0.217
1250 - 2450£0.19
2500 +£0.163

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Packaging Options:
RS Stock No.:
170-5432P
Mfr. Part No.:
PMV30UN2R
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

5.4 A

Maximum Drain Source Voltage

20 V

Package Type

TO-236

Series

PMV30UN2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Length

3mm

Number of Elements per Chip

1

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
CN
Switching solutions for your portable designs. Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology
Low threshold voltage
Very fast switching
Enhanced power dissipation capability of 1000 mW
Target applications
LED driver
Power management
Low-side load switch
Switching circuits

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