MagnaChip N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220 MDP11N60TH

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
170-3027
Mfr. Part No.:
MDP11N60TH
Brand:
MagnaChip
Find similar products by selecting one or more attributes.
Select all

Brand

MagnaChip

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

660 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

182 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

4.83mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

38.4 nC @ 10 V

Length

10.67mm

Height

16.51mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
KR

High Voltage (HV) MOSFET


High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.


MOSFET Transistors, MagnaChip