N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 Infineon IRFL4310TRPBF
- RS Stock No.:
- 170-2257
- Mfr. Part No.:
- IRFL4310TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 2500 units)*
£780.00
(exc. VAT)
£935.00
(inc. VAT)
Stock information currently inaccessible
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | £0.312 | £780.00 |
| 5000 + | £0.295 | £737.50 |
*price indicative
- RS Stock No.:
- 170-2257
- Mfr. Part No.:
- IRFL4310TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.2 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 200 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V | |
| Width | 3.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.7mm | |
| Series | IRFL4310PbF | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.8mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.2 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 200 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 17 nC @ 10 V | ||
Width 3.7mm | ||
Maximum Operating Temperature +150 °C | ||
Length 6.7mm | ||
Series IRFL4310PbF | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.8mm | ||
Non Compliant
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
