N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 Infineon IRFL4310TRPBF

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RS Stock No.:
170-2257
Mfr. Part No.:
IRFL4310TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

6.7mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.7mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Minimum Operating Temperature

-55 °C

Series

IRFL4310PbF

Height

1.8mm

Forward Diode Voltage

1.3V

Non Compliant

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Benefits:
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature