STMicroelectronics STripFET N-Channel MOSFET, 26 A, 100 V, 3-Pin TO-220 STP24NF10
- RS Stock No.:
- 168-6705
- Mfr. Part No.:
- STP24NF10
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
£23.55
(exc. VAT)
£28.25
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,300 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.471 | £23.55 |
| 100 - 450 | £0.352 | £17.60 |
| 500 - 950 | £0.325 | £16.25 |
| 1000 - 4950 | £0.316 | £15.80 |
| 5000 + | £0.309 | £15.45 |
*price indicative
- RS Stock No.:
- 168-6705
- Mfr. Part No.:
- STP24NF10
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 26 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | STripFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 85 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.15mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 26 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series STripFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 85 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Width 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.15mm | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics